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Um den spezifischen Cree, IncDatenblatt, Suche okDatasheet Zahl von Teilzeitbeschäftigten oder Komponente Beschreibung. Es wird Ihnen eine Liste aller passenden Teile mit Cree Datenblätter. Klicken Sie auf einen beliebigen aufgelisteten elektronisches Bauteil, um mehr Informationen einschließlich aller Angaben.
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| Teil no | Application |
|---|---|
| W6NRE0X-0000 | Diameter 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| W4TXE0X-0D00 | Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| W4NRE0X-0D00 | Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C505-XB290-E1000-A | 11.0mW; colorgreen; 3.8-4.0V; Xbright InGaN LED |
| C470-XB900-A | 150mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| W6NXD0K-0000 | Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| W6NXD3J-0000 | Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CSD10120D | 1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| CSD04060E | 600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| W4NXE4C-LD00 | Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CSD01060A | 600V; 1A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
| C525-CB230-E1000 | 0.650W; colorgreen; 3.7V; low current InGaN LED |
| C490-CB290-E1000 | 2.5mW; coloraqua blue; 3.3-3.7V; super bright InGaN LED |
| W4TRD0R-0D00 | Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C527-MB290-E1000 | 7.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED |
| W4NXE4C-SD00 | Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CRF-22010-001 | 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
| C405-XB900-A | 250mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| C460-XB290-E1000-A | 15.0mW; colordeep blue; 3.7-4.0V; Xbright InGaN LED |
| W4NRD8C-U000 | Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| CSD20060D | 600V; 20A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control, snubber |
| C460-UB290-E1000 | 5.5mW; colordeep blue; 3.5-3.9V; ultra bright InGaN LED |
| CXXX-MB290-S0100 | 5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
| C503-MB290-E1000 | 8.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED |
| W4NXE8C-SD00 | Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
| C470-XB290-E1000-A | 14.0mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
| C470-MB290-E1000 | 10.0mW; colorblue; 3.7-4.0V; mega bright InGaN LED |
| W4NXE8C-LD00 | Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
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