Path:okDatasheet > Halbleiter Datenblatt > Dallas Datenblatt > Dallas-13
3 DS1230Y-100 DS1236N-5 90-U0901-128 DS1250YP-100 DS1013S-35 DS4802U DS1013-70 DS2405Z/T&R DS1100LZ-300 DS1033Z-30/T&R DS1005S-100 DS1302SN DS1330WP-100 DS1844E-050/T&R DS1135U-20/T&R DS1553WP-120 DS1315N-5 DS1013M-70 DS1100M-30 DS1013-40 DS1742-70 DS1710S DS229 DS1233MS-5 DS1806
| Teil no | Hersteller | Application |
|---|---|---|
| DS9502P/T&R | Dallas | ESD Protection Diode |
| DS1985-F3 | Dallas | 16 kbit Add-Only iButton |
| DS1230Y-100 | Dallas | 256K Nonvolatile SRAM |
| DS1236N-5 | Dallas | MicroManager Chip |
| 90-U0901-128 | Dallas | IEEE EUI-64 Node Address Chip |
| DS1250YP-100 | Dallas | 4096K Nonvolatile SRAM |
| DS1013S-35 | Dallas | 3-in-1 Silicon Delay Line |
| DS4802U | Dallas | Low Voltage, Micro Power, High Performance, Rail-to-Rail Dual Op-Amp |
| DS1013-70 | Dallas | 3-in-1 Silicon Delay Line |
| DS2405Z/T&R | Dallas | Addressable Switch |
| DS1100LZ-300 | Dallas | 3.3V 5-tap economy timing element (delay line), 300ns |
| DS1033Z-30/T&R | Dallas | 3-in-1 Low Voltage Silicon Delay Line |
| DS1005S-100 | Dallas | 5-Tap Silicon Delay Line |
| DS1302SN | Dallas | Trickle Charge Timekeeping Chip |
| DS1330WP-100 | Dallas | 3.3V 256K Nonvolatile SRAM with Battery Monitor |
| DS1844E-050/T&R | Dallas | Quad Digital Potentiometer |
| DS1135U-20/T&R | Dallas | 3-in-1 High-Speed Silicon Delay Line |
| DS1553WP-120 | Dallas | 4MEG NV Y2KC Timekeeping RAM |
| DS1315N-5 | Dallas | Phantom Time Chip |
| DS1013M-70 | Dallas | 3-in-1 Silicon Delay Line |
| DS1100M-30 | Dallas | 5-tap economy timing element (delay line), 30ns |
| DS1013-40 | Dallas | 3-in-1 Silicon Delay Line |
| DS1742-70 | Dallas | Y2KC Nonvolatile Timekeeping RAM |
| DS1710S | Dallas | Partitioned NV Controller |
| DS229 | Dallas | Triple RS-232 Transmitter/Receiver |
| DS1233MS-5 | Dallas | EconoReset |
| DS1806E-100 | Dallas | Digital Sextet Potentiometer |
| DS1135Z-5/T&R | Dallas | 3-in-1 High-Speed Silicon Delay Line |
| DS83C520-MNL | Dallas | EPROM/ROM high-speed micro, 80C52-compatible, 256 bytes scratchpad RAM, 16kB program memory, 1kB extra on-chip SRAM for MOVX, 33 MHz |
| DS1073Z-100 | Dallas | 3V EconOscillator/divider, max 100MHz |