Path:okDatasheet > Halbleiter Datenblatt > Diodes Datenblatt > Diodes-52
G SBL6050PT TZX5V6B TZX24C MMBZ5240BTS 6A8 BZX84C3V6TS 1N5405G ES1A P4KE130C UDZ4V3B MB25-8 SBL4035PT 1N5392 MMBZ5242BT MBRB1535CT ZPD5.1 UDZ13B MMSZ5225B MBR2535CT PR6005 BAT54T MMSTA92 1.5KE82A P4KE100C MMSZ5235BS PBPC602 1N4150
| Teil no | Hersteller | Application |
|---|---|---|
| 1N4937 | Diodes | 600V; 1.0A fast recovery rectifier; fast switching for high efficiency |
| TZX3V0B | Diodes | 2.9-3.1V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current |
| SF20DG | Diodes | 200V; 2.0A super fast glass passivated rectifier; diffused junction |
| SBL6050PT | Diodes | 50V; 60A schottky barrier rectifier |
| TZX5V6B | Diodes | 5.3-5.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current |
| TZX24C | Diodes | 24.3-25.5V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current |
| MMBZ5240BTS | Diodes | 10V; 200mW triple surface mount zener diode array. Ideally suited for automated assembly |
| 6A8 | Diodes | 800V; 6.0A silicon rectifier; high current capability and low surge and forward voltage drop |
| BZX84C3V6TS | Diodes | 3.6V; 200mW triple surface mount zener diode array |
| 1N5405G | Diodes | 500V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop |
| ES1A | Diodes | 50V; 1.0A surface mount schottky barrier rectifier |
| P4KE130C | Diodes | 105.00V; 400W transient voltage suppressor |
| UDZ4V3B | Diodes | 4.170-4.430V; 200mW surface mount precision zener diode. Ideally suited for automated assembly processes |
| MB25-8 | Diodes | 800V; 25.0A high current silicon bridge rectifier |
| SBL4035PT | Diodes | 35V; 40A schottky barrier rectifier |
| 1N5392 | Diodes | 100V; 1.5A rectifier; high current capability and low forward voltage drop |
| MMBZ5242BT | Diodes | 12V; 150mW surface mount zner diode. Ideal for aotomated assembly |
| MBRB1535CT | Diodes | 35V; 15A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
| ZPD5.1 | Diodes | 4.8-5.4V silicon planar zener diode |
| UDZ13B | Diodes | 12.910-13.490V; 200mW surface mount precision zener diode. Ideally suited for automated assembly processes |
| MMSZ5225B | Diodes | 3.0V; 500mW surface mount zener diode. General purpose; Ideally suited for automated assembly processes |
| MBR2535CT | Diodes | 35V; 30A schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications |
| PR6005 | Diodes | 600V; 6.0A fast recovery rectifier; fasr switching for high efficiency |
| BAT54T | Diodes | 30V; 200mW surface mount schottky barrier diode |
| MMSTA92 | Diodes | 300V; 100mA PNP small signal surface mount transistor. Ideal for medium power amplification and switching |
| 1.5KE82A | Diodes | 70.10V; 1500W transient voltage suppressor |
| P4KE100C | Diodes | 81.00V; 400W transient voltage suppressor |
| MMSZ5235BS | Diodes | 6.8V; 200mW surface mount zener diode. General purpose. Ideally suited for automated assembly processes |
| PBPC602 | Diodes | 100V; 6.0A bridge rectifier |
| 1N4150 | Diodes | 75V; fast switching diode. Ideal for fast logic applications |