Path:OKDatasheet > Halbleiter Datenblatt > GSI Datenblatt > GS820H32T-4
GS820H32T-4 spec: 117MHz 11ns 64K x 32 2M synchronous burst SRAM
Ähnliche GS820H32T-4
- GS82032AQ-133
- 133MHz 10ns 64K x 32 2M synchronous burst SRAM
- GS82032AQ-133I
- 133MHz 10ns 64K x 32 2M synchronous burst SRAM
- GS82032AQ-166
- 166MHz 8.5ns 64K x 32 2M synchronous burst SRAM
- GS82032AQ-166I
- 166MHz 8.5ns 64K x 32 2M synchronous burst SRAM
- GS82032AQ-180
- 180MHz 8ns 64K x 32 2M synchronous burst SRAM
- GS82032AQ-180I
- 180MHz 8ns 64K x 32 2M synchronous burst SRAM
- GS82032AQ-4
- 133MHz 10ns 64K x 32 2M synchronous burst SRAM
- GS82032AQ-4I
- 133MHz 10ns 64K x 32 2M synchronous burst SRAM
GS820H32T-4 Datenblatt und Spezifikationen
Hersteller : GSI
Verpacken : TQFP
Pins : 100
Temperatur : Min 0 °C | Max 70 °C
Größe : 376 KB
Application : 117MHz 11ns 64K x 32 2M synchronous burst SRAM
GS820H32T-4 PDF-Download