Path:OKDatasheet > Halbleiter Datenblatt > Hexawave Datenblatt
Stichwort: Hexawave Datenblatt, Hexawave Datasheet, Hexawave Data Sheet, Hexawave Datenblätter, Hexawave Inc
Hexawave Datenblatt-Suche, Neuheiten Hexawave Datenblätter
Um den spezifischen Hexawave IncDatenblatt, Suche okDatasheet Zahl von Teilzeitbeschäftigten oder Komponente Beschreibung. Es wird Ihnen eine Liste aller passenden Teile mit Hexawave Datenblätter. Klicken Sie auf einen beliebigen aufgelisteten elektronisches Bauteil, um mehr Informationen einschließlich aller Angaben.
Hexawave offizielle Webseite
Die neuesten Hexawave Datenblatt PDF
| Teil no | Application |
|---|---|
| HWS306 | GaAs MMIC SPDT switch |
| HWC34NC | 12 W C-band power FET non-via hole chip |
| HWS301 | GaAs MMIC SPDT switch |
| HWS303 | GaAs MMIC SPDT switch |
| HWL30YRA | 6 W L-band GaAs power FET |
| HWL34NC | 12 W L-band power FET non-via hole chip |
| HWF1687RA | 7.5 W L-band GaAs power FET |
| HWL34YRF | 12 W L-band GaAs power FET |
| HWL26NPA | 2 W L-band GaAs power FET |
| HWF1682RA | 20 W L-band GaAs power FET |
| HWS2352 | GaAs MMIC SPDT terminated switch |
| HWC27YC | 3.5 W C-band power FET via hole chip |
| HWL34YRA | 12 W L-band GaAs power FET |
| HWL30NPA | 2.8 W L-band GaAs power FET |
| HWS305 | GaAs MMIC SPDT switch |
| HWL30YRF | 6 W L-band GaAs power FET |
| HWL27YRA | 3.5 W L-band GaAs power FET |
| HWL27NC | 3.5 W L-band power FET via hole chip |
| HWF1686NC | 3.5 W L-band power FET non-via hole chip |
| HWL26YC | 1.7 W L-band power FET via hole chip |
| HWL23NPB | 0.7 W L-band GaAs power FET |
| HWL36YRA | 15 W L-band GaAs power FET |
| HWL32NPA | 2.8 W L-band GaAs power FET |
| HWS332 | GaAs MMIC SPDT terminated switch |
| HWL32NPA | 2.8 W L-band GaAs power FET |
| HWS332 | GaAs MMIC SPDT terminated switch |
| HWL36YRF | 15 W L-band GaAs power FET |
| HWC27NC | 3.5 W C-band power FET non-via hole chip |
Hexawave Profil
Hexawave, Inc. was established in 1991 with the goal of serving the rapidly growing wireless communication industry. The company is dedicated to developing, manufacturing, and marketing a wide range of GaAs based RF products. Headquartered in Hsinchu Science-Based industrial Park, the high-tech center of Taiwan, Hexawave has a 35,000 square ft. facility, which includes a class 100 GaAs wafer fab line, assembly and testing facility.
Hexawave IncDatenblätter Katalog
1 2