Path:OKDatasheet > Halbleiter Datenblatt > Hynix Datenblatt
Stichwort: Hynix Datenblatt, Hynix Datasheet, Hynix Data Sheet, Hynix Datenblätter, Hynix Semiconductor Inc
Path:OKDatasheet > Halbleiter Datenblatt > Hynix Datenblatt
Stichwort: Hynix Datenblatt, Hynix Datasheet, Hynix Data Sheet, Hynix Datenblätter, Hynix Semiconductor Inc
Um den spezifischen Hynix Semiconductor IncDatenblatt, Suche okDatasheet Zahl von Teilzeitbeschäftigten oder Komponente Beschreibung. Es wird Ihnen eine Liste aller passenden Teile mit Hynix Datenblätter. Klicken Sie auf einen beliebigen aufgelisteten elektronisches Bauteil, um mehr Informationen einschließlich aller Angaben.
Hynix offizielle Webseite
Teil no | Application |
---|---|
GMS30C2232 | 32 BIT RISC/DSP |
HMS81020TL | ROM/RAM size 20 K/448 bytes, 2-3.6 V , 4 MHz,8-bit single-chip microcontroller |
GMS34004TK | Program memory 512 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
HY51VS18163HGT-7 | Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
GMS81C7016K | ROM/RAM size16 Kb/448 bytes, 4 MHz, 2.7-5.5 V, 8 BIT single chip microcontroller |
GMS36112 | Program memory 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
GMS90C52Q24 | ROM/RAM size8 bytes/256 bytes, 24 MHz, 4.25-5.5 V, 8 BIT single chip microcontroller |
HMS81032TL | ROM/RAM size 32 K/448 bytes, 2-3.6 V , 4 MHz,8-bit single-chip microcontroller |
GM71C18163CT-7 | 1,048,576 words x 16 bit CMOS DRAM, 70ns |
GMS77C1000 | EPROM programming/verify specification |
HMS30C7202 | 1.8-3.3 V , 100 MHz, Highly modular design based |
GMS34112TW | Program memory 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
GL3276A | 30-80 KHz, 6 V, Bipolar analog IC |
GMS81C2112 | ROM/RAM size12 Kb/448 bytes,2.7-5.5 V, 1-4.5 MHz, CMOS single-chip 8-bit microcontroller |
GMS90L52PL | ROM/RAM size8 bytes/256 bytes, 16 MHz, 2.7-3.6 V, 8 BIT single chip microcontroller |
GMS81004 | ROM/RAM size 4.096/448 bytes, 4MHz, 8-bit single chip microcomputer |
GM71C17400CT-5 | 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns |
GMS34140TM | Program memory 1024 bytes, 300KHz-500KHz, 4-5 V, 4 BIT single chip microcomputer |
GM71C17800CLJ-5 | CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns, low power |
HY51V17403HGJ-6 | 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns |
GMS37140 | Program memory 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
GMS36112 | Program memory 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
HY57V658020TC-15 | 2Mbit x 4bank x 8 SDRAM, LVTTL, 150ns |
GM71C17403CT-5 | CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns |
GMS81516BK | ROM/RAM size16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
GMS81516B | ROM/RAM size16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
GMS36140T | Program memory 1,024 bytes, 300KHz-1MHz, 2-3.6 V, 4 BIT single chip microcomputer |
GL6850 | 30 V, two tone ringer |
Hynix Semiconductor, IncManufacturers of SRAM, DRAM, FLASH and other semiconductor devices. Also offers ASIC foundry services. Formerly Hyundai Electronics