Path:okDatasheet > Halbleiter Datenblatt > IR Datenblatt > IR-45
L SD103N25S15MC SD600N08MTC ST110S04P1L SD103N25S10MSC SD400R16PV 307UA200P5 SD203R20S15MC IRFI9640G SD200N24PBC IRF9520N SD200R25MC IRFIZ34V IRFPE40 IRFY044CM ST380CH04C2L SD233N30S50MTC ST730C14L0 ST223C08CHK3L 309U120 307UR160P2 ST330C14C2L 303U80P3 SD203R14S20PSC 309UR250 IRF
| Teil no | Hersteller | Application |
|---|---|---|
| IRF634S | IR | Power MOSFET, 250V, 8.1A |
| ST333C04LHK3L | IR | Inverter grade thyristor |
| SD103N25S15MC | IR | Fast recovery diode |
| SD600N08MTC | IR | Standard recovery diode |
| ST110S04P1L | IR | Phase control thyristor |
| SD103N25S10MSC | IR | Fast recovery diode |
| SD400R16PV | IR | Standard recovery diode |
| 307UA200P5 | IR | Standard recovery diode |
| SD203R20S15MC | IR | Fast recovery diode |
| IRFI9640G | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.50 Ohm, ID = -6.1 A |
| SD200N24PBC | IR | Standard recovery diode |
| IRF9520N | IR | HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8A |
| SD200R25MC | IR | Standard recovery diode |
| IRFIZ34V | IR | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 28mOhm, ID = 20A |
| IRFPE40 | IR | HEXFET power MOSFET. VDSS = 800 V, RDS(on) = 2.0 Ohm, ID = 5.4 A |
| IRFY044CM | IR | HEXFET power mosfet |
| ST380CH04C2L | IR | Phase control thyristor |
| SD233N30S50MTC | IR | Fast recovery diode |
| ST730C14L0 | IR | Phase control thyristor |
| ST223C08CHK3L | IR | Inverter grade thyristor |
| 309U120 | IR | Standard recovery diode |
| 307UR160P2 | IR | Standard recovery diode |
| ST330C14C2L | IR | Phase control thyristor |
| 303U80P3 | IR | Standard recovery diode |
| SD203R14S20PSC | IR | Fast recovery diode |
| 309UR250 | IR | Standard recovery diode |
| IRFR9220 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 1.5 Ohm, ID = -3.6A |
| ST1230C12K0L | IR | Phase control thyristor |
| IRF5N3415 | IR | HEXFET power MOSFET surface mount. BVDSS = 150V, RDS(on) = 0.042 Ohm, ID = 37.5A |
| IRFDC20 | IR | HEXFET power MOSFET |