Path:okDatasheet > Halbleiter Datenblatt > Leshan Radio Datenblatt > Leshan Radio-57

BB178 FF6 SMAJ24A 1N5226A SMAJ36A D5SB20 P4KE11 1N5240C P4KE33A RB201 1N5267D HVC369B HER105G R4000F MMBD701LT1 KBL401 MTZJ10B 1N990B MUN2116T1 R4000 MTZJ5.1A SMAJ30A 1N759A BAV199LT1 1N4006 FM403 KBPC110

Leshan Radio Datenblätter Katalog-57

Teil noHerstellerApplication
P6KE160 Leshan Radio160 V, 1 mA, 600 W, transient voltage suppressor
1N982B Leshan Radio75 V, zener diode
RT81 Leshan Radio100 V, 8 A, automotive bridge rectifier
BB178 Leshan Radio32 V, VHF variable capacitance diode
FF6 Leshan Radio800 V, 1 A, fast recovery SMA diode
SMAJ24A Leshan Radio24 V, 1 mA, transient voltage suppressor
1N5226A Leshan Radio3.3 V, 20 mA, zener diode
SMAJ36A Leshan Radio36 V, 1 mA, transient voltage suppressor
D5SB20 Leshan Radio200 V, 6 A, bridge rectifier
P4KE11 Leshan Radio11 V, 1 mA, 400 W, transient voltage suppressor
1N5240C Leshan Radio10 V, 20 mA, zener diode
P4KE33A Leshan Radio33 V, 1 mA, 400 W, transient voltage suppressor
RB201 Leshan Radio100 V, 2 A, bridge rectifier
1N5267D Leshan Radio75 V, 1.7 mA, zener diode
HVC369B Leshan Radio15 V, variable capacitance diode
HER105G Leshan Radio400 V, 1 A, high efficiency GPP diode
R4000F Leshan Radio4000 V, 0.2 A high voltage fast recovery diode
MMBD701LT1 Leshan Radio70 V, silicon hot-carrier diode
KBL401 Leshan Radio50 V, 4 A, bridge rectifier
MTZJ10B Leshan Radio10 V, 5 mA, zener diode
1N990B Leshan Radio160 V, zener diode
MUN2116T1 Leshan Radio50 V, bias resistor transistor
R4000 Leshan Radio4000 V, 0.2 A high voltage diode
MTZJ5.1A Leshan Radio5.1 V, 5 mA, zener diode
SMAJ30A Leshan Radio30 V, 1 mA, transient voltage suppressor
1N759A Leshan Radio12 V, 20 mA, zener diode
BAV199LT1 Leshan Radio70 V, 215 mA, dual switching diode
1N4006 Leshan Radio800 V, 1 A general diode
FM403 Leshan Radio200 V, 1 A, glass passivated SMA diode
KBPC110 Leshan Radio1000 V, 3 A, bridge rectifier

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