| Teil no | Hersteller | Application |
|---|
| MDE-53D271K | MDE Semiconductor | 270V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| MDE-53D221K | MDE Semiconductor | 220V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| SAC5.0 | MDE Semiconductor | 5.00V; 44.0A ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode |
| SMAJ7.0 | MDE Semiconductor | 7.00V; 10mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P6KE8.2 | MDE Semiconductor | 6.63V; 10mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ36A | MDE Semiconductor | 36.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1N6382 | MDE Semiconductor | 8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| 1.5KE100 | MDE Semiconductor | 81.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 1.5KE220 | MDE Semiconductor | 175.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 3T110A | MDE Semiconductor | 90V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
| SA64 | MDE Semiconductor | 64.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 15KP48A | MDE Semiconductor | 48.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 1.5KE170 | MDE Semiconductor | 138.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SMLJ40A | MDE Semiconductor | 40.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-53D681K | MDE Semiconductor | 680V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| 5KP70 | MDE Semiconductor | 70.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| MDE-20D361K | MDE Semiconductor | 360V; max peak current10000A; metal oxide varistor. Standard D series 20mm disc |
| SMCJ13A | MDE Semiconductor | 13.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MAX40-14.0C | MDE Semiconductor | 14.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| SMDJ26 | MDE Semiconductor | 26.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 1N6385 | MDE Semiconductor | 15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MAX20-110.0CA | MDE Semiconductor | 110.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-5D331K | MDE Semiconductor | 330V; max peak current800A; metal oxide varistor. Standard D series 5mm disc |
| SMBJ78A | MDE Semiconductor | 78.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P6KE250 | MDE Semiconductor | 202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| LCE7.5A | MDE Semiconductor | 7.50V; 10mA ;1500W peak pulse power; low capacitance transient voltage suppressor. Ideal for data line applications |
| MAX40-10.0CA | MDE Semiconductor | 10.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-53D781K | MDE Semiconductor | 780V; max peak current70000A; metal oxide varistor. High energy series 53mm single disc |
| SMCJ58 | MDE Semiconductor | 58.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 15KW40A | MDE Semiconductor | 40.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
