Path:okDatasheet > Halbleiter Datenblatt > Micron Datenblatt > Micron-6

55L256V32PF-7.5IT MT28C3212P2FL-11BET MT4LC4M16R6TG-5 MT55L256L36PT-10IT MT55L256L32PT-10IT MT55L512L12PF-6 MT28C3224P18FL-80BET MT58L1MY18DF-7.5 MT48V16M16LFFG MT28F200B5SG-8T MT4LC4M4E9DJ-5 MT4LC16M4A7TG-6 MT4LC16M4H9DJ-6S MT28F320A18FF-70TET MT28S4M16B1LLFG-10 MT28F320J3FS-11E

Micron Datenblätter Katalog-6

Teil noHerstellerApplication
MT28F640J3RG-15ET Micron128Mb Q-flash memory
MT55L256V32PF-7.5IT Micron256K x 32 ZBT SRAM, 7.5ns
MT28C3212P2FL-11BET Micron0.9-2.2V low voltage, extended temperature SRAM COMBO memory
MT4LC4M16R6TG-5 Micron4 MEG x 16 EDO DRAM, 50ns
MT55L256L36PT-10IT Micron256K x 36 ZBT SRAM, 10ns
MT55L256L32PT-10IT Micron256K x 32 ZBT SRAM,10ns
MT55L512L12PF-6 Micron512K x 18 ZBT SRAM, 6ns
MT28C3224P18FL-80BET MicronLow voltage, extended temperature flash and SRAM COMBO memory
MT58L1MY18DF-7.5 Micron3.3V, 1 Meg x 18 pipelined, DCD syncburst SRAM, 7.5ns
MT48V16M16LFFG Micron16Meg x 16 x 4 banks; 2.5V mobile SDRAM
MT28F200B5SG-8T Micron256K x 8; 5V only, dual supply, smart 5 boot block flash memory
MT4LC4M4E9DJ-5 Micron4Meg x 4 banks, EDO DRAM, 3.3V, standard refresh, 50ns
MT4LC16M4A7TG-6 Micron16Meg x 4 FPM DRAM
MT4LC16M4H9DJ-6S Micron16Meg x 4 EDO DRAM
MT28F320A18FF-70TET Micron2Meg x 16; low voltage, extended temperature flash memory
MT28S4M16B1LLFG-10 Micron1Meg x 16 x 4banks, 100MHz syncflash memory
MT28F320J3FS-11ET Micron32Mb Q-flash memory
MT4LC8M8E1DJ-5S Micron512K x 32 x 4banks, 143MHz DRAM
MT4LC8M8P4TG-6S Micron8Meg x 8 EDO RAM
MT46V16M16FJ-6 Micron4 Meg x 16 x 4banks, CL=2.5, 167MHz double data rate (DDR) SDRAM
MT46V2M32LG-55 Micron512K x 32 x 4banks, CL=3, 183MHz double data rate (DDR) SDRAM
MT28F008B5VG-8B Micron1Meg x 8; 5V only, dula supply, smart 5 boot block flash memory
MT55L512V18PT-10IT Micron512K x 18 ZBT SRAM, 10ns
MT48LC32M4A1TG-8E Micron3.3V, 32Meg x 4-bit SDRAM, 8ns
MT28F322D20FH-704T Micron2Meg x 16 async/page/burst flash memory
MT28S2M32B1LCTG-7EET Micron512K x 32 x 4banks, 143MHz syncflash memory
MT4C4M4E8DJS-6 Micron4Meg x 4 banks, EDO DRAM, 5.0V, self refresh, 60ns
MT28F320J3FS-15ET Micron128Mb Q-flash memory
MT28S4M16LCTG-10 Micron1Meg x 16 x 4banks, 100MHz syncflash memory
MT28F322D20FH-804BET Micron2Meg x 16 async/page/burst flash memory

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