Path:okDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE Electronic-39
621 NTE5933 NTE5860 NTE56064 15040-ECG NTE2343 NTE1549 NTE2562 NTE5266AK NTE5631 NTE700 NTE555A NTE240 2V040 NTE2945 NTE126 NTE4933 NTE6007 NTE5121A NTE5641 NTE1714M NTE3048 NTE2358 NTE2535 NTE6809 NTE5270A NTE5527 NTE2407
Teil no | Hersteller | Application |
---|---|---|
NTE5327 | NTE Electronic | Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 800V. |
NTE5426 | NTE Electronic | Silicon controlled rectifier (SCR). Sensitive gate. Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 10A. |
NTE5621 | NTE Electronic | TRIAC, 10A. Repetitive peak off-state voltage Vdrm = 25V. RMS on-state current 8A. |
NTE5933 | NTE Electronic | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 20A. |
NTE5860 | NTE Electronic | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. |
NTE56064 | NTE Electronic | TRIAC, 8A, high commutation. Repetitive peak off-state voltage Vdrm = 800V. RMS on-state current 8A. |
15040-ECG | NTE Electronic | Surge arrester (gas filled). Nominal breakdown voltage 75VDC |
NTE2343 | NTE Electronic | Silicon complementary NPN transistor. Darlington power amp,switch. |
NTE1549 | NTE Electronic | Integrated circuit. Dot/bar display driver. |
NTE2562 | NTE Electronic | Silicon complementary NPN transistor. High current switch. |
NTE5266AK | NTE Electronic | 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 27.0V. Zener test current Izt = 460mA. |
NTE5631 | NTE Electronic | TRIAC, 10A. Repetitive peak off-state voltage Vdrm = 50V. RMS on-state current 10A. |
NTE700 | NTE Electronic | Integrated circuit. TV chroma system. |
NTE555A | NTE Electronic | Silicon pin diode. VNF band switch. |
NTE240 | NTE Electronic | Silicon complemenrary PNP transistor. High voltage video amplifier. |
2V040 | NTE Electronic | Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 68 V @ 1mA DC test current. |
NTE2945 | NTE Electronic | MOSFET. N-channel, enhancement mode high speed switch. |
NTE126 | NTE Electronic | Germanium mesa transistor, PNP, for high-speed switching applications. |
NTE4933 | NTE Electronic | Surge clamping, transient overvoltage suppressor, bidirectional. VR = 20.50V max reverse stand off voltage. |
NTE6007 | NTE Electronic | Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A. |
NTE5121A | NTE Electronic | Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 7.5V. Test current Izt = 175mA. |
NTE5641 | NTE Electronic | TRIAC, 2.5A. Repetitive peak off-state voltage Vdrm = 200V. RMS on-state current 2.5A. |
NTE1714M | NTE Electronic | Integrated circuit. Remote control amplifier/detector. |
NTE3048 | NTE Electronic | Optoisolator. TRIAC driver output |
NTE2358 | NTE Electronic | Silicon complementary PNP transistor. Digital w/2 built-in 22k bias resistors. |
NTE2535 | NTE Electronic | Silicon complementary PNP transistor. High current switch. |
NTE6809 | NTE Electronic | Integrated circuit. 8-bit microprocessor (MPU). |
NTE5270A | NTE Electronic | 50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 36.0V. Zener test current Izt = 350mA. |
NTE5527 | NTE Electronic | Silicon controlled rectifier (SCR), 25A. Repetitive peak forward and reverse voltage Vdrm,Vrrm = 400V. RMS forard current It(rms) = 25A. |
NTE2407 | NTE Electronic | Silicon PNP transistor. General purpose amp, surface mount (compl to NTE2406). |