Path:okDatasheet > Halbleiter Datenblatt > NTE Electronic Datenblatt > NTE Electronic-60
38 NTE1101 NTE4946 NTE16006-ECG NTE2359 NTE1796 NTE1529 NTE190 NTE5437 NTE5806 NTE2635 NTE50 NTE1859 NTE1639 NTE2378 NTE2114 NTE5184A NTE2957 NTE2415 NTE5340 NTE4950 NTE3220 NTE2027 NTE123A NTE7101 NTE834SM NTE27 NTE100
Teil no | Hersteller | Application |
---|---|---|
NTE1692 | NTE Electronic | Integrated circuit. Telephone pulse dialer w/redial. |
NTE903 | NTE Electronic | Integrated circuit. Operational amplifier. |
NTE1538 | NTE Electronic | Integrated circuit. TV horizontal/vrtical OSC driver. |
NTE1101 | NTE Electronic | Integrated circuit. General purpose amplifier, mixer, and oscillator. |
NTE4946 | NTE Electronic | Surge clamping, transient overvoltage suppressor, unidirectional. VR = 40.20V max reverse stand off voltage. |
NTE16006-ECG | NTE Electronic | Polymetric positive temperature coefficient (PTC) resettable fuse. |
NTE2359 | NTE Electronic | Silicon complementary NPN transistor. Digital w/2 built-in 47k bias resistors. |
NTE1796 | NTE Electronic | Integrated circuit. Hybrid switching voltage regulator. |
NTE1529 | NTE Electronic | Integrated circuit. Dual OP amplifier. |
NTE190 | NTE Electronic | Silicon NPN transistor. High voltage amplifier. |
NTE5437 | NTE Electronic | Silicon controlled rectifier (SCR). Repetitive peak reverse voltage Vrrm = 400V. RMS on-state current It = 8A. |
NTE5806 | NTE Electronic | Axial lead standard recovery. Silicon rectifier, 3 amp. Peak repetitive reverse voltage, working peak reverse voltage, DS blocking voltage 600V. Non-repetitive peak reverse voltage 800V |
NTE2635 | NTE Electronic | Silicon NPN transistor. Horizontal deflection w/internal damper diode. |
NTE50 | NTE Electronic | Silicon complementary PNP transistor. General purpose, high voltage amplifier, driver. |
NTE1859 | NTE Electronic | Integrated circuit. dbx TV noise reduction integrated circuit. |
NTE1639 | NTE Electronic | Integrated circuit. CMOS clock generator/driver for BBDs. |
NTE2378 | NTE Electronic | MOSFET N-channel enhancement mode. High speed switch. |
NTE2114 | NTE Electronic | Integrated circuit. MOS, static 4K RAM, 300ns. |
NTE5184A | NTE Electronic | Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 8.7V. Zener test current Izt = 290mA. |
NTE2957 | NTE Electronic | MOSFET. N-channel, enhancement mode high speed switch. |
NTE2415 | NTE Electronic | Silicon complementary PNP transistor. Digital w/2 built-in bias 10k resistors (surface mount). |
NTE5340 | NTE Electronic | Silicon bridge rectifier. Single-phase, 40 A. Peak reverse voltage, Prv = 200V. Average forward current, If(av) = 40A. |
NTE4950 | NTE Electronic | Surge clamping, transient overvoltage suppressor, unidirectional. VR = 43.60V max reverse stand off voltage. |
NTE3220 | NTE Electronic | Optoisolator NPN transistor output, 2-channel type. |
NTE2027 | NTE Electronic | Integrated circuit. Hex LED digit driver. |
NTE123A | NTE Electronic | Silicon conplementary NPN transistor. General purpose. |
NTE7101 | NTE Electronic | Integrated circuit. AF power amplifier, 7W. |
NTE834SM | NTE Electronic | Integrated circuit. Low power low offset voltage comparator. |
NTE27 | NTE Electronic | Germanium PNP transistor. High current, high gain amp. |
NTE100 | NTE Electronic | Germanium complementary transistor PNP oscillator, mixer for AM radio, medium speed switch. Collector-base voltage 25 V. Collector-emitter voltage 24V. Emitter-base voltage 12V. Collector current 100mA. |