Path:OKDatasheet > Halbleiter Datenblatt > Philips Datenblatt > PHW10N40E
PHW10N40E spec: 400 V, power MOS transistor avalanche energy rated
Ähnliche PHW10N40E
- PHW10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW11N50E
- PowerMOS transistor. Avalancne energy rated.
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW13N40E
- PowerMOS transistor. Avalanche energy rated.
- PHW14N50E
- PowerMOS transistor. Avalanche energy rated.
PHW10N40E Datenblatt und Spezifikationen
Hersteller : Philips
Verpacken : SOT
Pins : 3
Temperatur : Min -55 °C | Max 150 °C
Größe : 98 KB
Application : 400 V, power MOS transistor avalanche energy rated
PHW10N40E PDF-Download