Path:okDatasheet > Halbleiter Datenblatt > PanJit Datenblatt > PanJit-99

P6SMBJ45 FR1G SD1020YT 1N5408 1N5397 1.5SMCJ8.0C 1.5SMCJ17C 1SMB5937 2EZ12 MMBZ5252B 2EZ13 SA48 1F3G PS151 PG4003 1N4007 TSP065C P4KE200CA PS304R SD830YS P4SMAJ11A SD630CS P4SMAJ18CA 3.0SMCJ24CA CP602 P4SMAJ11 MMBZ5231B GBPC15005W

PanJit Datenblätter Katalog-99

Teil noHerstellerApplication
P4KE200A PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 171.00V, Vbr(min/max) = 190.00/210.00V, It = 1 mA.
MMSZ5254BS PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 27 V @ Izt. 200 mWatts zener diode.
P6SMBJ45 PanJitSurfase mount transient voltage suppressor. 600W. Vrwm = 45 V. Vbr(min/max) = 50.0/63.3 V. It = 1.0 mA. Ir = 5 uA. Vc = 80.3 V. Ipp = 7.5 A.
FR1G PanJitSurface mount fast switching rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified current 1.0 A.
SD1020YT PanJitDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 20 V. Max average forward rectified current at Tc = 75degC 10.0 A.
1N5408 PanJitHigh current plastic silicon rectifier. Max reccurent peak reverse voltage 1000V. Max average forward rectified current 3.0A.
1N5397 PanJitPlastic silicon rectifier. Max reccurent peak reverse voltage 600V. Max average forward rectified current 1.5A.
1.5SMCJ8.0C PanJitSurfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 8.0V; Vbr(min/max) = 8.89/11.30V @ It = 1.0mA; Ir(@ Vrwm) = 100uA; Vc = 15.0V @ Ipp = 100.0A
1.5SMCJ17C PanJitSurfase mount transient voltage suppressor. 1500W peak power pulse. Vrwm = 17V; Vbr(min/max) = 18.9/23.9V @ It = 1.0mA; Ir(@ Vrwm) = 5uA; Vc = 30.5V @ Ipp = 49.2A
1SMB5937 PanJitSurface mount silicon zener diode. Power 1.5 Watts. Nominal zener voltage Vz = 33 V. Test current Izt = 11.4 mA
2EZ12 PanJitGlass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 12.0 V. Test current Izt = 41.5 mA.
MMBZ5252B PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 24 V @ Izt. 500 mWatts zener diode.
2EZ13 PanJitGlass passivated junction silicon zener diode. Power 2.0 Watts. Nominal zener voltage Vz = 13.0 V. Test current Izt = 38.5 mA.
SA48 PanJitGlass passivated junction transient voltage suppressor. 500 Watt peak pulse power. Vrwm = 48.00V, Vbr(min/max) = 53.30/67.50V, It = 1 mA.
1F3G PanJitGlass passivated junction fast switching rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A.
PS151 PanJitPlastic silicon rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 9.5mm lead length at Ta = 60degC 1.5 A.
PG4003 PanJitGlass passivated junction plastic rectifier. Max recurrent peak reverse voltage 200 A. Max average forward rectified current 0.375inches lead length at 75degC 1.0 A..
1N4007 PanJitPlastic silicon rectifier. Max recurrent peak reverse voltage 1000 V. Max average forward rectified current 1.0 A.
TSP065C PanJitSurfase mount bi-directional thyristor surge protector device. Rated repetitive peakoff-state voltage 65V. Breakover voltage 88V. On-state voltage 5V. Repetitive peakoff-state current 5uA Breakover current 800mA.
P4KE200CA PanJitGlass passivated junction transient voltage suppressor. 400 Watt peak power. 1.0 Watt steady state. Vrwm = 171.00V, Vbr(min/max) = 190.00/210.00V, It = 1 mA.
PS304R PanJitFast switching plastic rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 9.5mm lead length at Ta = 55degC 3.0 A.
SD830YS PanJitSurfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 85degC 8.0 A.
P4SMAJ11A PanJitSurfase mount transient voltage suppressor. Reverse stand-off voltage 11 V. Breakdown voltage(min/max) 12.21/14.0 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltag 18.2 V. Peak pulse current 22.0 A.
SD630CS PanJitDPak surfase mount schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward rectified current at Tc = 75degC 6.0 A.
P4SMAJ18CA PanJitSurfase mount transient voltage suppressor. Reverse stand-off voltage 18 V. Breakdown voltage(min/max) 20.0/23.3 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 29.2 V. Peak pulse current 13.7 A.
3.0SMCJ24CA PanJitSurface mount transient voltage suppressor. Peak power pulse 3000 W. Vrwm = 24 V. Vbr(max/min) = 26.7/30.7 V @ It = 1.0 mA. Ir = 5 uA @ Vrwm. Vc = 38.9 V @ Ipp = 77.2 A.
CP602 PanJitSingle-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 6A . Max recurrent peak reverse voltage 200V. Max average rectified output 6.0A(at Tc=50degC), 3.0(at Ta=25degC).
P4SMAJ11 PanJitSurfase mount transient voltage suppressor. Reverse stand-off voltage 11 V. Breakdown voltage(min/max) 12.21/15.4 V. Test current 1.0 mA. Reverse leakage 5 uA. Max clamp voltage 20.1 V. Peak pulse current 20.0 A.
MMBZ5231B PanJitSurface mount silicon zener diode. Nominal zener voltage Vz = 5.1 V @ Izt. 500 mWatts zener diode.
GBPC15005W PanJitHigh current silicon bridge rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current for resistive load at Tc=55degC 15 A.

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