Path:OKDatasheet > Halbleiter Datenblatt > ASI Datenblatt > VHB1-28T
VHB1-28T spec: NPN silicon RF power transistor
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VHB1-28T Datenblatt und Spezifikationen
Hersteller : ASI
Verpacken :
Pins : 3
Temperatur : Min -65 °C | Max 200 °C
Größe : 18 KB
Application : NPN silicon RF power transistor
VHB1-28T PDF-Download