Path:OKDatasheet > Halbleiter Datenblatt > Alliance Datenblatt > AS4LC1M16E5-50TI
AS4LC1M16E5-50TI spec: 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
Ähnliche AS4LC1M16E5-50TI
- AS4LC1M16E5-50JI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TC
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
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- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-50TI
- 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
- AS4LC1M16E5-60JC
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
- AS4LC1M16E5-60JI
- 3V 1M x 16 CM0S DRAM (EDO), 60ns RAS access time
AS4LC1M16E5-50TI Datenblatt und Spezifikationen
Hersteller : Alliance
Verpacken : plastic TSOPII
Pins : 50
Temperatur : Min -40 °C | Max 85 °C
Größe : 664 KB
Application : 3V 1M x 16 CM0S DRAM (EDO), 50ns RAS access time
AS4LC1M16E5-50TI PDF-Download