Path:OKDatasheet > Halbleiter Datenblatt > Austin Semiconductor Datenblatt > AS5C512K8DJ-45E/IT
AS5C512K8DJ-45E/IT spec: 512K x 8 SRAM - high speed with revolutionary pinout
Ähnliche AS5C512K8DJ-45E/IT
- AS5C4009LLECJ-70/IT
- 512K x 8 SRAM - ultra low power
- AS5C512K8ECJ-30L/XT
- 512K x 8 SRAM - high speed with revolutionary pinout
- AS5C512K8EC-15L/XT
- 512K x 8 SRAM - high speed with revolutionary pinout
- AS5C4008EC-20L/IT
- 512K x 8 SRAM memory array
- AS5C512K8DJ-20E/883C
- 512K x 8 SRAM - high speed with revolutionary pinout
- AS5C512K8DJ-25E/IT
- 512K x 8 SRAM - high speed with revolutionary pinout
- AS5C512K8ECJ-25L/IT
- 512K x 8 SRAM - high speed with revolutionary pinout
- AS5C4008ECA-25L/883C
- 512K x 8 SRAM memory array
AS5C512K8DJ-45E/IT Datenblatt und Spezifikationen
Hersteller : Austin Semiconductor
Verpacken : SOJ
Pins : 36
Temperatur : Min -40 °C | Max 85 °C
Größe : 457 KB
Application : 512K x 8 SRAM - high speed with revolutionary pinout
AS5C512K8DJ-45E/IT PDF-Download