Ähnliche 1N5402G

  • 1N5400
    • Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 3.0 A.
  • 1N5400G
    • Glass passivated rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 3.0 A.
  • 1N5401
    • Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 3.0 A.
  • 1N5401G
    • Glass passivated rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 3.0 A.
  • 1N5402
    • Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 3.0 A.
  • 1N5402G
    • Glass passivated rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 3.0 A.
  • 1N5404
    • Silicon rectifier. Case molded plastic. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 3.0 A.
  • 1N5404G
    • Glass passivated rectifier. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 3.0 A.

1N5402G Datenblatt und Spezifikationen

Hersteller : Bytes 

Verpacken : DO-27 

Pins : 2 

Temperatur : Min -65 °C | Max 175 °C

Größe : 166 KB

Application : Glass passivated rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 3.0 A. 

1N5402G PDF-Download