Path:OKDatasheet > Halbleiter Datenblatt > Ceramate Datenblatt > 54S416T-6
54S416T-6 spec: High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
Ähnliche 54S416T-6
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- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
- 54S416T-6
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
- 54S416T-7
- High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
54S416T-6 Datenblatt und Spezifikationen
Hersteller : Ceramate
Verpacken : TSOP
Pins : 54
Temperatur : Min 0 °C | Max 70 °C
Größe : 1126 KB
Application : High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
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