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Ähnliche W4TRD8R-0D00

  • W4TRD0R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4TRD8R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TRD8R-0D00 Datenblatt und Spezifikationen

Hersteller : Cree 

Verpacken :  

Pins : 0 

Temperatur : Min 0 °C | Max 0 °C

Größe : 306 KB

Application : Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

W4TRD8R-0D00 PDF-Download