Path:OKDatasheet > Halbleiter Datenblatt > Diodes Datenblatt > 1N4006G
1N4006G spec: 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
Path:OKDatasheet > Halbleiter Datenblatt > Diodes Datenblatt > 1N4006G
1N4006G spec: 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop
Hersteller : Diodes
Verpacken :
Pins : 2
Temperatur : Min -65 °C | Max 150 °C
Größe : 65 KB
Application : 800V; 1.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop