Ähnliche BSS123W

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    • 100V; 170mA N-channel enchancement mode field effect transistor
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    • 50V; 200mA N-channel enchancement mode field effect transistor
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BSS123W Datenblatt und Spezifikationen

Hersteller : Diodes 

Verpacken : SOT-323 

Pins : 3 

Temperatur : Min -55 °C | Max 150 °C

Größe : 73 KB

Application : 100V; 170mA N-channel enchancement mode field effect transistor 

BSS123W PDF-Download