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TB1100M spec: 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
Ähnliche TB1100M
- TB1100H
- 90V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
- TB1100L
- 90V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
- TB1100M
- 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
TB1100M Datenblatt und Spezifikationen
Hersteller : Diodes
Verpacken : SMB
Pins : 2
Temperatur : Min -40 °C | Max 150 °C
Größe : 205 KB
Application : 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction
TB1100M PDF-Download