Path:OKDatasheet > Halbleiter Datenblatt > EIC Datenblatt > 1N5820S
1N5820S spec: 20 V, 3.0 A schottky barrier rectifier diode
Ähnliche 1N5820S
- 1N5817G
- 20 V, 1.0 A schottky barrier rectifier diode
- 1N5818G
- 30 V, 1.0 A schottky barrier rectifier diode
- 1N5819G
- 40 V, 1.0 A schottky barrier rectifier diode
- 1N5820
- 20 V, 3.0 A schottky barrier rectifier diode
- 1N5820S
- 20 V, 3.0 A schottky barrier rectifier diode
- 1N5821
- 30 V, 3.0 A schottky barrier rectifier diode
- 1N5821S
- "30 V, 3.0 A schottky barrier rectifier diode"
- 1N5822
- 40 V, 3.0 A schottky barrier rectifier diode
1N5820S Datenblatt und Spezifikationen
Hersteller : EIC
Verpacken : D2A
Pins : 2
Temperatur : Min -65 °C | Max 125 °C
Größe : 30 KB
Application : 20 V, 3.0 A schottky barrier rectifier diode
1N5820S PDF-Download