Ähnliche EC-10P20

  • EC-10P16
    • P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
  • EC-10N16
    • N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
  • EC-10N20
    • N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
  • EC-10N20
    • N-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
  • EC-10P20
    • P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range.
  • EC-10N16
    • N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
  • EC-10N16
    • N-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.
  • EC-10P16
    • P-channel lateral MOSFET. High power 125 W. Drain-source voltage 160V. Storage temperature range.

EC-10P20 Datenblatt und Spezifikationen

Hersteller : EXICON 

Verpacken : TO247 

Pins : 3 

Temperatur : Min -55 °C | Max 150 °C

Größe : 249 KB

Application : P-channel lateral MOSFET. High power 125 W. Drain-source voltage 200V. Storage temperature range. 

EC-10P20 PDF-Download