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Ähnliche ECF10N25

  • ECF10N25
    • N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range.
  • ECF10P25
    • P-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range.

ECF10N25 Datenblatt und Spezifikationen

Hersteller : EXICON 

Verpacken : TO3 

Pins : 3 

Temperatur : Min -55 °C | Max 150 °C

Größe : 70 KB

Application : N-channel lateral MOSFET. High power 125 W. Drain-source voltage 250V. Storage temperature range. 

ECF10N25 PDF-Download