Path:OKDatasheet > Halbleiter Datenblatt > Elpida Datenblatt > PD45128163G5-A80L-9JF
PD45128163G5-A80L-9JF spec: 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit
Ähnliche PD45128163G5-A80L-9JF
- PD45128163G5-A10I-9JF
- 16M; 100MHz 64-bit synchronous dynamic RAM module
- PD45128163G5-A10LI-9JF
- 16M; 100MHz 64-bit synchronous dynamic RAM module
- PD45128163G5-A10T-9JF
- 128M; 100MHz synchronous DRAM 4-bank, LVTTL
- PD45128163G5-A75I-9JF
- 16M; 133MHz 64-bit synchronous dynamic RAM module
- PD45128163G5-A75L-9JF
- 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit
- PD45128163G5-A75LI-9JF
- 16M; 133MHz 64-bit synchronous dynamic RAM module
- PD45128163G5-A75LT-9JF
- 128M; 133MHz synchronous DRAM 4-bank, LVTTL
- PD45128163G5-A75SU-9JF
- 128M; 133MHz synchronous dynamic RAM module
PD45128163G5-A80L-9JF Datenblatt und Spezifikationen
Hersteller : Elpida
Verpacken : TSOP
Pins : 54
Temperatur : Min 0 °C | Max 0 °C
Größe : 750 KB
Application : 128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuit
PD45128163G5-A80L-9JF PDF-Download