Path:OKDatasheet > Halbleiter Datenblatt > Fujitsu Datenblatt > MBM29DL640E80PBT
MBM29DL640E80PBT spec: Flash memory CMOS 64M (8M x 8/4M x 16) bit
Ähnliche MBM29DL640E80PBT
- MBM29DL162TD12PBT
- Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation
- MBM29LV160B-80PBT-SF2
- CMOS 16M (2M x 8/1M x 16) bit
- MBM29PL160TD-75PFTH
- CMOS 16M (2M x 8/1M x16) bit
- MBM29DL162TD90PFTR
- Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation
- MBM29PL3200BE70PBT
- Page mode flash memory CMOS 32M (2M x 16/1 x 32) bit
- MBM29DL162TD90PBT
- Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation
- MBM29LV800BA-90PBT-SF2
- CMOS 8M (1M x 8/512K x 16) bit
- MBM29DL322BE90TR
- Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation
MBM29DL640E80PBT Datenblatt und Spezifikationen
Hersteller : Fujitsu
Verpacken : plastic FBGA
Pins : 63
Temperatur : Min -20 °C | Max 70 °C
Größe : 1004 KB
Application : Flash memory CMOS 64M (8M x 8/4M x 16) bit
MBM29DL640E80PBT PDF-Download