Path:OKDatasheet > Halbleiter Datenblatt > GSI Datenblatt > GS8160E32T-200I
GS8160E32T-200I spec: 6.5ns 200MHz 512K x 32 synchronous burst SRAM
Ähnliche GS8160E32T-200I
- GS8160Z18T-225I
- 6ns 225MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM
- GS8180D18D-333
- 333MHz 1M x 18 18MB sigmaQuad SRAM
- GS8170LW72C-333
- 333MHz 256K x 72 18MB double late write sigmaRAM SRAM
- GS816036T-225
- 6ns 225MHz 512K x 36 18Mb synchronous burst SRAM
- GS818DV18D-333
- 333MHz 1M x 18 18MB sigmaQuad SRAM
- GS8160F36T-8.5
- 8.5ns 512K x 36 18MB synchronous burst SRAM
- GS816037T-200
- 200MHz 512K x 36 synchronous SRAM
- GS8160E36T-200
- 6.5ns 200MHz 512K x 36 synchronous burst SRAM
GS8160E32T-200I Datenblatt und Spezifikationen
Hersteller : GSI
Verpacken : TQFP
Pins : 100
Temperatur : Min -40 °C | Max 85 °C
Größe : 862 KB
Application : 6.5ns 200MHz 512K x 32 synchronous burst SRAM
GS8160E32T-200I PDF-Download