Path:OKDatasheet > Halbleiter Datenblatt > GSI Datenblatt > GS880E32T-100
GS880E32T-100 spec: 100MHz 12ns 256K x 32 9Mb sync burst SRAM
Ähnliche GS880E32T-100
- GS880E36T-11
- 100MHz 11ns 256K x 36 9Mb sync burst SRAM
- GS88032BT-200I
- 200MHz 6.5ns 256K x 32 9Mb sync burst SRAM
- GS881E18AT-166I
- 166MHz 7ns 512K x 18 8Mb sync burst SRAM
- GS882Z36BB-133
- 133MHz 8.5ns 256K x 36 9Mb pipelined and flow through synchronous NBT SRAM
- GS88236B-11
- 100MHz 11ns 256K x 36 8Mb S/DCD sync burst SRAM
- GS881Z18AT-250
- 250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
- GS880E18AT-200
- 200MHz 6.5ns 512K x 18 9Mb sync burst SRAM
- GS880E36BT-225I
- 225MHz 6ns 256K x 36 9Mb sync burst SRAM
GS880E32T-100 Datenblatt und Spezifikationen
Hersteller : GSI
Verpacken : TQFP
Pins : 100
Temperatur : Min 0 °C | Max 70 °C
Größe : 934 KB
Application : 100MHz 12ns 256K x 32 9Mb sync burst SRAM
GS880E32T-100 PDF-Download