Path:OKDatasheet > Halbleiter Datenblatt > HYNIX Datenblatt > GM71V17403CLJ-5
GM71V17403CLJ-5 spec: CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power
Ähnliche GM71V17403CLJ-5
- GM71C17400CJ-7
- 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
- GM71C17400CLJ-5
- 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power
- GM71C17400CLJ-6
- 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power
- GM71C17400CLJ-6
- 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power
- GM71C17400CLJ-7
- 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns, low power
- GM71C17400CLT-5
- 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns, low power
- GM71C17400CLT-6
- 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power
- GM71C17400CT-5
- 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
GM71V17403CLJ-5 Datenblatt und Spezifikationen
Hersteller : HYNIX
Verpacken : SOJ
Pins : 24
Temperatur : Min 0 °C | Max 70 °C
Größe : 108 KB
Application : CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns, low power
GM71V17403CLJ-5 PDF-Download