Path:OKDatasheet > Halbleiter Datenblatt > HYNIX Datenblatt > HY51VS18163HGJ-5
HY51VS18163HGJ-5 spec: "Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns"
Ähnliche HY51VS18163HGJ-5
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51VS18163HGJ-5 Datenblatt und Spezifikationen
Hersteller : HYNIX
Verpacken : SOJ
Pins : 42
Temperatur : Min 0 °C | Max 70 °C
Größe : 117 KB
Application : "Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns"
HY51VS18163HGJ-5 PDF-Download