Path:OKDatasheet > Halbleiter Datenblatt > HYNIX Datenblatt > HY51VS18163HGJ-6
HY51VS18163HGJ-6 spec: Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns
Path:OKDatasheet > Halbleiter Datenblatt > HYNIX Datenblatt > HY51VS18163HGJ-6
HY51VS18163HGJ-6 spec: Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns
Hersteller : HYNIX
Verpacken : SOJ
Pins : 42
Temperatur : Min 0 °C | Max 70 °C
Größe : 117 KB
Application : Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns