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HJ3669 spec: Emitter to base voltage5V 2A NPN epitaxial planar transistor for using in power amplifier applications power switching applications
Ähnliche HJ3669
- HJ3669
- Emitter to base voltage5V 2A NPN epitaxial planar transistor for using in power amplifier applications power switching applications
HJ3669 Datenblatt und Spezifikationen
Hersteller : Hi Sincerity
Verpacken : TO-252
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 36 KB
Application : Emitter to base voltage5V 2A NPN epitaxial planar transistor for using in power amplifier applications power switching applications
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