Path:OKDatasheet > Halbleiter Datenblatt > Hi Sincerity Datenblatt > HLB124E
HLB124E spec: Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
Ähnliche HLB124E
- HLB120A
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB121I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122I
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB122J
- Emitter to base voltage6V; NPN triple diffused planar type high voltage transistor for use in switching applications
- HLB123I
- Emitter to base voltage8V; NPN epitaxial planar transistor
- HLB123T
- Emitter to base voltage8V; NPN epitaxial planar transistor
- HLB124E
- Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
- HLB125E
- Emitter to base voltage9V; NPN epitaxial planar transistor for light applications and low switch-mode power suppies
HLB124E Datenblatt und Spezifikationen
Hersteller : Hi Sincerity
Verpacken : TO-220
Pins : 3
Temperatur : Min 0 °C | Max 0 °C
Größe : 40 KB
Application : Emitter to base voltage8V; NPN epitaxial planar transistor for high voltage, high speed switching inductive circuit and amplifier applications
HLB124E PDF-Download