Path:OKDatasheet > Halbleiter Datenblatt > Hitachi Datenblatt > BB302M
BB302M spec: Small signal high frequency amplifier field effect (FET) transistor
Path:OKDatasheet > Halbleiter Datenblatt > Hitachi Datenblatt > BB302M
BB302M spec: Small signal high frequency amplifier field effect (FET) transistor
Hersteller : Hitachi
Verpacken : MPAK-4
Pins : 0
Temperatur : Min 0 °C | Max 0 °C
Größe : 67 KB
Application : Small signal high frequency amplifier field effect (FET) transistor