Path:OKDatasheet > Halbleiter Datenblatt > Hitachi Datenblatt > HN58C257AT-85
HN58C257AT-85 spec: 265K EEPROM (32-kword x 8-bit) Ready/Busy and RES function, 85ns access time
Ähnliche HN58C257AT-85
- HN58C1001FP-15
- 1M EEPROM (128-kword x 8) ready/busy and RES function
- HN58C1001P-15
- 1M EEPROM (128-kword x 8) ready/busy and RES function
- HN58C1001T-15
- 1M EEPROM (128-kword x 8) ready/busy and RES function
- HN58C256AFP-10
- 265K EEPROM (32-kword x 8-bit), 100ns access time
- HN58C256AFP-85
- 265K EEPROM (32-kword x 8-bit), 85ns access time
- HN58C256AP-10
- 265K EEPROM (32-kword x 8-bit), 100ns access time
- HN58C256AP-85
- 265K EEPROM (32-kword x 8-bit), 85ns access time
- HN58C256AT-10
- 265K EEPROM (32-kword x 8-bit), 100ns access time
HN58C257AT-85 Datenblatt und Spezifikationen
Hersteller : Hitachi
Verpacken : plastic TSOP
Pins : 32
Temperatur : Min 0 °C | Max 70 °C
Größe : 138 KB
Application : 265K EEPROM (32-kword x 8-bit) Ready/Busy and RES function, 85ns access time
HN58C257AT-85 PDF-Download