HN58V65AP-10 spec: 64k EEPROM (8-kword x 8-bit), 100ns access time (2.7V to 4.4V), 70ns access time (4.5V to 5.5V)

Ähnliche HN58V65AP-10

HN58C1001FP-15
- 1M EEPROM (128-kword x 8) ready/busy and RES function
HN58C1001P-15
- 1M EEPROM (128-kword x 8) ready/busy and RES function
HN58C1001T-15
- 1M EEPROM (128-kword x 8) ready/busy and RES function
HN58C256AFP-10
- 265K EEPROM (32-kword x 8-bit), 100ns access time
HN58C256AFP-85
- 265K EEPROM (32-kword x 8-bit), 85ns access time
HN58C256AP-10
- 265K EEPROM (32-kword x 8-bit), 100ns access time
HN58C256AP-85
- 265K EEPROM (32-kword x 8-bit), 85ns access time
HN58C256AT-10
- 265K EEPROM (32-kword x 8-bit), 100ns access time

HN58V65AP-10 Datenblatt und Spezifikationen

Hersteller : Hitachi

Verpacken : plastic DIP

Pins : 28

Temperatur : Min 0 °C | Max 70 °C

Größe : 139 KB

Application : 64k EEPROM (8-kword x 8-bit), 100ns access time (2.7V to 4.4V), 70ns access time (4.5V to 5.5V)