Path:OKDatasheet > Halbleiter Datenblatt > ICSI Datenblatt > IC61LV25616-10KI
IC61LV25616-10KI spec: 10ns; 3.3V; 256K x 16 high speed asynchronous CMOS static RAM
Ähnliche IC61LV25616-10KI
- IC61SP12836-117B
- 117MHz; 3.3V; 128K x 36 synchronous pipelined static RAM
- IC61LV12816-12T
- 12ns; 3.3V; 128K x 16 high-speed CMOS static RAM
- IC61S6432-133TQ
- 133MHz; 3.3V; 64K x 32 synchronous pipelined static RAM
- IC61SF25632T-9.5TQ
- 9.5ns; 2.5-3.3V; 256K x 32; 8Mb SYNCBURST flow through static RAM
- IC61C256AH-12J
- 12ns; 5V; 32K x 8; high-speed CMOS static RAM
- IC61LV12816-12TI
- 12ns; 3.3V; 128K x 16 high-speed CMOS static RAM
- IC61LV2568-12KI
- 12ns; 3.3V; 256K x 16 high-speed CMOS static RAM
- IC61SF12832-8.5TQI
- 8.5ns; 3.3V; 128K x 32 synchronous flow-through static RAM
IC61LV25616-10KI Datenblatt und Spezifikationen
Hersteller : ICSI
Verpacken : SOJ
Pins : 44
Temperatur : Min -40 °C | Max 85 °C
Größe : 272 KB
Application : 10ns; 3.3V; 256K x 16 high speed asynchronous CMOS static RAM
IC61LV25616-10KI PDF-Download