Path:okDatasheet > Halbleiter Datenblatt > IR Datenblatt > IR-10

34L IRF5210 ST700C20L2L IRF5NJ3315 IRFZ44VZ IRFR9024NTRL ST380C04C1L JANTX2N6851 IR2131J SD103N12S20PBC IRG4BC20 SD203N08S15MBC IRF9Z14L 72UF120PD 72UF10A ST330C12C1L SD203R25S15PC IRFR9014 IR2125 303UA120 ST380C04C3 70U160PD 305URA120P2 IRFP252 ST380C04C1 300U40A IRFU5410 ST230S

IR Datenblätter Katalog-10

Teil noHerstellerApplication
SD233R45S50MTC IRFast recovery diode
IRF9Z34L IRHEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.14 Ohm, ID = -18A
IRF5210 IRHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
ST700C20L2L IRPhase control thyristor
IRF5NJ3315 IRHEXFET power MOSFET surface mount. BVDSS = 150V, RDS(on) = 0.08 Ohm, ID = 20A
IRFZ44VZ IRN-channel power MOSFET for fast switching applications, 60V, 57A
IRFR9024NTRL IRPower MOSFET, 55V, 11A
ST380C04C1L IRPhase control thyristor
JANTX2N6851 IRHEXFET power mosfet
IR2131J IR3 high side and 3 low side driver
SD103N12S20PBC IRFast recovery diode
IRG4BC20 IRInsulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V @ VGE = 15V, IC = 9.0A
SD203N08S15MBC IRFast recovery diode
IRF9Z14L IRHEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -6.7A
72UF120PD IRStandard recovery diode
72UF10A IRStandard recovery diode
ST330C12C1L IRPhase control thyristor
SD203R25S15PC IRFast recovery diode
IRFR9014 IRHEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.50 Ohm, ID = -5.1A
IR2125 IRCurrent limiting single channel driver
303UA120 IRStandard recovery diode
ST380C04C3 IRPhase control thyristor
70U160PD IRStandard recovery diode
305URA120P2 IRStandard recovery diode
IRFP252 IRN-channel NEXFET, 200V, 27A
ST380C04C1 IRPhase control thyristor
300U40A IRStandard recovery diode
IRFU5410 IRHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.205 Ohm, ID = -13A
ST230S04M2L IRPhase control thyristor
ST1900C50R0 IRPhase control thyristor

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