Path:okDatasheet > Halbleiter Datenblatt > IR Datenblatt > IR-8
M IRG4PSC71K SD500R40PC 301URA120 ST2600C30R3L SD303C16S15C 47LF80 IRFZ48V IRF7822 ST180C20C1 SD103N04S20MSC ST280C06C0 ST300C08C3 309UR120P2 IRFBF30 SD153N04S10PBV IRGBF30F IRFI9634G IRKL50012 SD203R14S10PC SD233N30S50PSC IRKT43018 SD400N24PC ST2600C30R0 SD600N16MSC ST700C18L1 S
| Teil no | Hersteller | Application |
|---|---|---|
| ST333S08PFM1 | IR | Inverter grade thyristor |
| 82RIA80M | IR | Phase control thyristor |
| IRG4PSC71K | IR | Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.83V @ VGE = 15V, IC = 60A |
| SD500R40PC | IR | Standard recovery diode |
| 301URA120 | IR | Standard recovery diode |
| ST2600C30R3L | IR | Phase control thyristor |
| SD303C16S15C | IR | Fast recovery diode |
| 47LF80 | IR | Standard recovery diode |
| IRFZ48V | IR | Power MOSFET, 60V, 72A |
| IRF7822 | IR | HEXFET power MOSFET for DC-DC converter. VDS = 30V, RDS(on) = 5.0mOhm |
| ST180C20C1 | IR | Phase control thyristor |
| SD103N04S20MSC | IR | Fast recovery diode |
| ST280C06C0 | IR | Phase control thyristor |
| ST300C08C3 | IR | Phase control thyristor |
| 309UR120P2 | IR | Standard recovery diode |
| IRFBF30 | IR | HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 3.6A |
| SD153N04S10PBV | IR | Fast recovery diode |
| IRGBF30F | IR | Insulated gate bipolar transistor |
| IRFI9634G | IR | HEXFET power MOSFET. VDSS = -250V, RDS(on) = 1.0 Ohm, ID = -4.1 A |
| IRKL50012 | IR | Thyristor/diode and thyristor/thyristor |
| SD203R14S10PC | IR | Fast recovery diode |
| SD233N30S50PSC | IR | Fast recovery diode |
| IRKT43018 | IR | Thyristor/diode and thyristor/thyristor |
| SD400N24PC | IR | Standard recovery diode |
| ST2600C30R0 | IR | Phase control thyristor |
| SD600N16MSC | IR | Standard recovery diode |
| ST700C18L1 | IR | Phase control thyristor |
| ST3230C16R3L | IR | Phase control thyristor |
| SD253N12S15MSV | IR | Fast recovery diode |
| SD600N08MC | IR | Standard recovery diode |