| Teil no | Hersteller | Application |
|---|
| IRGPH50F | IR | Insulated gate bipolar transistor |
| SD103R04S15PBC | IR | Fast recovery diode |
| 300UR5A | IR | Standard recovery diode |
| IRF520VS | IR | HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A |
| IRF9640 | IR | HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.50 Ohm, ID = -11A |
| SD300R28MC | IR | Standard recovery diode |
| IR6210 | IR | Intelligent high side mosfet power switch |
| IRFBA90N20D | IR | HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.023 Ohm, ID = 98A |
| IRU1205-28CL | IR | 300mA ultra low dropout positive fixed 2.8V regulator |
| SD600R28PTC | IR | Standard recovery diode |
| 305UA160 | IR | Standard recovery diode |
| IRFPG30 | IR | HEXFET power MOSFET. VDSS = 1000 V, RDS(on) = 5.0 Ohm, ID = 3.1 A |
| IR2128S | IR | Current sensing single channel driver |
| IR6216 | IR | Intelligent high side mosfet power switch |
| 309UR200 | IR | Standard recovery diode |
| SD403C12S10C | IR | Fast recovery diode |
| SD200N16PBV | IR | Standard recovery diode |
| 301U250P3 | IR | Standard recovery diode |
| ST230C08C0 | IR | Phase control thyristor |
| IRL620S | IR | HEXFET power mosfet |
| SD403C10S15C | IR | Fast recovery diode |
| ST2600C30R1L | IR | Phase control thyristor |
| ST103S04PFN2L | IR | Inverter grade thyristor |
| IR2118S | IR | Single channel driver |
| ST330C04C3 | IR | Phase control thyristor |
| SD203R08S10PBC | IR | Fast recovery diode |
| IRF2807 | IR | Power MOSFET, 75V, 82A |
| IRC644 | IR | HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm |
| SD153R10S10PV | IR | Fast recovery diode |
| 45LR160D | IR | Standard recovery diode |
