Path:okDatasheet > Halbleiter Datenblatt > IR Datenblatt > IR-114
SD300N12MSC SD203N12S15PBC 309UA80P2 SD203R25S20MSC IRF9640STRL JANTX2N6796 IRFP340 45LR5 ST180S04P2 30EPF06 ST173S12MFK1L IRGPH20M SD203R08S10MSC SD203N10S20PBC SD253R04S15PBV SD253N12S20PSV SD253R14S20MBV 309UA80P3 ST280CH06C3 302UFR120AYPD SD300R32MC 45LFR120D SD600R04PTC SD2
| Teil no | Hersteller | Application |
|---|---|---|
| IRF3706 | IR | HEXFET power MOSFET. VDSS = 20V, RDS(on) = 8.5 mOhm, ID = 77A |
| ST733C04LHK3 | IR | Inverter grade thyristor |
| SD300N12MSC | IR | Standard recovery diode |
| SD203N12S15PBC | IR | Fast recovery diode |
| 309UA80P2 | IR | Standard recovery diode |
| SD203R25S20MSC | IR | Fast recovery diode |
| IRF9640STRL | IR | P-channel MOSFET for fast switching applications, 200V, 11A |
| JANTX2N6796 | IR | HEXFET power mosfet |
| IRFP340 | IR | HEXFET power MOSFET. VDSS = 400 V, RDS(on) = 0.55 Ohm, ID = 11 A |
| 45LR5 | IR | Standard recovery diode |
| ST180S04P2 | IR | Phase control thyristor |
| 30EPF06 | IR | Fast soft recovery rectifier diode, 10A, 600V, 60ns |
| ST173S12MFK1L | IR | Inverter grade thyristor |
| IRGPH20M | IR | Insulated gate bipolar transistor |
| SD203R08S10MSC | IR | Fast recovery diode |
| SD203N10S20PBC | IR | Fast recovery diode |
| SD253R04S15PBV | IR | Fast recovery diode |
| SD253N12S20PSV | IR | Fast recovery diode |
| SD253R14S20MBV | IR | Fast recovery diode |
| 309UA80P3 | IR | Standard recovery diode |
| ST280CH06C3 | IR | Phase control thyristor |
| 302UFR120AYPD | IR | Standard recovery diode |
| SD300R32MC | IR | Standard recovery diode |
| 45LFR120D | IR | Standard recovery diode |
| SD600R04PTC | IR | Standard recovery diode |
| SD200R04MSC | IR | Standard recovery diode |
| 20CJQ030 | IR | Schottky rectifier |
| IRF9Z34N | IR | HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.10 Ohm, ID = -19A |
| IRF5EA1310 | IR | HEXFET power MOSFET surface mount. BVDSS = 100V, RDS(on) = 0.036 Ohm, ID = 23A |
| SD253R10S20PV | IR | Fast recovery diode |