Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRC540
IRC540 spec: HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm
Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRC540
IRC540 spec: HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm
Hersteller : IR
Verpacken : TO-220
Pins : 5
Temperatur : Min -55 °C | Max 175 °C
Größe : 244 KB
Application : HEXFET power MOSFET. Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm