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IRC730 spec: HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm
Ähnliche IRC730
- IRC730
- HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm
- IRC740
- HEXFET power MOSFET. Continuous drain current 10A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 0.55 Ohm
IRC730 Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : TO-220
Pins : 5
Temperatur : Min -55 °C | Max 150 °C
Größe : 245 KB
Application : HEXFET power MOSFET. Continuous drain current 5.5A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 400V. Drain-to-source on-resistance 1.0 Ohm
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