Ähnliche IRF1010N

IRF1010E
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
IRF1010EL
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IRF1010N
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IRF1010N Datenblatt und Spezifikationen

Hersteller : IR

Verpacken :

Pins : 3

Temperatur : Min -55 °C | Max 175 °C

Größe : 232 KB

Application : HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.