IRF430 spec: Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A

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IRF430 Datenblatt und Spezifikationen

Hersteller : IR

Verpacken : TO-3

Pins : 3

Temperatur : Min -55 °C | Max 150 °C

Größe : 160 KB

Application : Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = 500V, RDS(on) = 1.5 Ohm, ID = 4.5A