Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRF520VL
IRF520VL spec: HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
Ähnliche IRF520VL
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF520VL Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : TO-262
Pins : 3
Temperatur : Min -55 °C | Max 175 °C
Größe : 141 KB
Application : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
IRF520VL PDF-Download