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IRF7478 spec: HEXFET power MOSFET. VDSS = 60V, RDS(on) = 26mOhm, ID = 4.2A @ VGS = 10V. RDS(on) = 30mOhm, ID = 3.5A @ VGS = 4.5V.
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IRF7478 Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : SO
Pins : 8
Temperatur : Min -55 °C | Max 150 °C
Größe : 229 KB
Application : HEXFET power MOSFET. VDSS = 60V, RDS(on) = 26mOhm, ID = 4.2A @ VGS = 10V. RDS(on) = 30mOhm, ID = 3.5A @ VGS = 4.5V.
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