Path:OKDatasheet > Halbleiter Datenblatt > IR Datenblatt > IRF7530
IRF7530 spec: HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.030 Ohm.
Ähnliche IRF7530
- IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF720
- N-channel HEXFET, 400V, 3.3A
- IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
- IRF721
- N-channel HEXFET, 350V, 3.3A
- IRF722
- N-channel HEXFET, 400V, 2.8A
IRF7530 Datenblatt und Spezifikationen
Hersteller : IR
Verpacken : Micro8
Pins : 8
Temperatur : Min -55 °C | Max 150 °C
Größe : 91 KB
Application : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 0.030 Ohm.
IRF7530 PDF-Download